2SK1636(l), 2SK1636(s) silicon n-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current no secondary breakdown suitable for switching regulator and dc-dc converter outline 3 2 1 4 3 2 1 4
ldpak 1. gate
2. drain
3. source
4. drain d g s
2SK1636(l), 2SK1636(s) 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 250 v gate to source voltage v gss 30 v drain current i d 15 a drain peak current i d(pulse) * 1 60 a body to drain diode reverse drain current i dr 15 a channel dissipation pch* 2 75 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 m s, duty cycle 1% 2. value at t c = 25 c
2SK1636(l), 2SK1636(s) 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 250 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 30v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 25 v, v ds = 0 zero gate voltage drain current i dss 250 m av ds = 200 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 3.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.22 0.27 w i d = 8 a, v gs = 10 v * 1 forward transfer admittance |yfs| 6.0 10.0 s i d = 8 a, v ds = 10 v * 1 input capacitance ciss 1250 pf v ds = 10 v, v gs = 0, f = 1 mhz output capacitance coss 510 pf reverse transfer capacitance crss 85 pf turn-on delay time t d(on) 24nsi d = 8 a, v gs = 10 v, r l = 3.75 w rise time t r 85ns turn-off delay time t d(off) 110 ns fall time t f 60ns body to drain diode forward voltage v df 1.0 v i f = 15 a, v gs = 0 body to drain diode reverse recovery time t rr 400 ns i f = 15 a, v gs = 0, di f /dt = 100 a/ m s note 1. pulse test
2SK1636(l), 2SK1636(s) 4 120 80 40 0 50 100 150 case temperature t c (?) channel dissipation pch (w) power vs. temperature derating 100 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 1 30 10 3 1 0.3 0.1 3 1,000 300 100 10 30 100 m s 1 ms dc operation (t c = 25?) pw = 10 ms (1 shot) 10 m s ta = 25? operation in this area
is limited by r ds (on) 20 820 drain to source voltage v ds (v) typical transfer characteristics 16 4 41216 0 8 12 drain current i d (a) v gs = 3.5 v 4.5 v 5 v 4 v 5.5 v pulse test 10 v 8 v 20 410 drain to source voltage v ds (v) typical transfer characteristics 16 4 268 0 8 12 drain current i d (a) v ds = 10 v
pulse test ta = 75?
25?
?5? 10 410 gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) 8 2 268 0 4 6 drain to source saturation voltage
vs. gate to source voltage i d = 15 a 10 a 5 a pulse test 5 100 drain current i d (a) static drain to source on state resistance
r ds (on) ( w ) 1 static drain to source on state
resistance vs. drain current 2 1 0.5 0.2 0.1 0.05 2 5 10 20 50 v gs = 10 v pulse test 15 v
2SK1636(l), 2SK1636(s) 5 1.0 40 160 case temperature t c (?) static drain to source on state resistance
r ds (on) ( w ) 0.8 0.2 0 80 120 0 0.4 0.6 static drain to source on state
resistance vs. temperature ?0 pulse test
v gs = 10 v
i d = 15 a 10 a 5 a 50 50 forward transfer admittance ? yfs ? (s) forward transfer admittance
vs. drain current 0.5 20 10 5 2 1 0.5 drain current i d (a) 12 51020 v ds = 10 v
pulse test t c = ?5?
25?
75?
1,000 50 reverse drain current i dr (a) reverse recovery time t rr (ns) body to drain diode reverse
recovery time 0.5 200 100 20 10 12 51020 di/dt = 100 a/ m s, ta = 25?
v gs = 0
500 50 10,000 20 50 drain to source voltage v ds (v) capacitance c (pf) 10 30 40 typical capacitance vs.
drain to source voltage 0 1,000 100 10 v gs = 0
f = 1 mhz crss coss ciss 500 40 100 gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics 400 100 20 60 80 0 200 300 20 16 4 0 8 12 gate to source voltage v gs (v) v dd = 50 v
100 v
200 v v dd = 200 v
100 v
50 v i d = 15 a v gs v ds 500 20 drain current i d (a) switching time t (ns) 0.2 switching characteristics 200 100 50 20 10 5 0.5 2 5 110 v gs = 10 v, pw = 2 m s
duty < 1%
t d (off) t f t d (on) t r
2SK1636(l), 2SK1636(s) 6 20 0.8 2.0 source to drain voltage v sd (v) reverse drain current i dr (a) 16 0.4 1.2 1.6 8 12 reverse drain current vs.
source to drain voltage 0 4 pulse test v gs = 10 v v gs = 0, ? v 3 pulse width pw (s) normalized transient thermal impedance g s (t) 1.0 0.1 0.3 10 m 0.03 0.01 100 m 10 m 100 m 1 10
1 m normalized transient thermal impedance vs. pulse width pw p dm d = t pw q ch? (t) = g s (t) ? q ch?
q ch? = 1.67?/w, t c = 25? t t c = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse switching time test circuit vin monitor vout monitor r l v dd
30 v d.u.t 50 w vin
10 v = . . vout waveforms t d (on) 10% 10% 90% 90% 10% 90% vin t r t d (off) t f
2SK1636(l), 2SK1636(s) 7 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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